Laser Operations LLC, a world leader in the design and manufacture of
brightness, high power semiconductor lasers, has demonstrated
>6.25W from a 50µm wide 808nm single emitter, in
excess of 125mW per micron of emitting length. Manufactured with Laser
Operations' proprietary BrightLase®
technology, the single emitter power levels are well above the facet
power densities previously reported in the 808nm regime.
“Our customer’s applications are increasingly
requiring the highest brightness single emitters for their solid state
processing, medical, printing, and defense
products. The demonstration of world record brightness levels from
808nm high power single emitters will enable Laser Operations to
commercialize a new
line of high brightness high power semiconductor lasers.”
Jeffrey Ungar, Chief Technology Officer at Laser Operations, commented.